A novel sputtering technique: Inductively Coupled Impulse Sputtering (ICIS)
نویسندگان
چکیده
منابع مشابه
High power impulse magnetron sputtering discharge
J. T. Gudmundsson, N. Brenning, Daniel Lundin and Ulf Helmersson, High power impulse magnetron sputtering discharge, 2012, Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, (30), 030801. http://dx.doi.org/10.1116/1.3691832 Copyright: American Vacuum Society, This article may be downloaded for personal use only. Any other use requires prior permission of the author and the ...
متن کاملPlasma properties in high power impulse magnetron sputtering
.....................................................................................................I PREFACE.......................................................................................................III PAPERS INCLUDED IN THE THESIS ........................................................... V RELATED PUBLICATIONS NOT INCLUDED IN THE THESIS.................... VI ACKNOWLEDGEMENTS ...
متن کاملEnergy flux measurements in high power impulse magnetron sputtering
The total energy flux in a high power impulse magnetron sputtering (HiPIMS) plasma has been measured using thermal probes. Radial flux (parallel to the magnetron surface) as well as axial flux (perpendicular to the magnetron surface) were measured at different positions, and resulting energy flux profiles for the region between the magnetron and the substrate are presented. It was found that th...
متن کاملOff-normal Film Growth by High Power Impulse Magnetron Sputtering
In this study we contribute towards establishing the process-microstructure relationships in thin films grown off-normally by ionized physical vapor deposition. High power impulse magnetron sputtering (HiPIMS) is used at various peak target powers and deposition rates to grow copper (Cu) and chromium (Cr) films from a cathode placed at an angle 90 degrees with respect to the substrate normal. F...
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ژورنال
عنوان ژورنال: IOP Conference Series: Materials Science and Engineering
سال: 2012
ISSN: 1757-8981,1757-899X
DOI: 10.1088/1757-899x/39/1/012006